The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2024
Filed:
Mar. 07, 2022
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventors:
Navneet K. Jain, Milpitas, CA (US);
Mahbub Rashed, Cupertino, CA (US);
Assignee:
GlobalFoundries U.S. Inc., Malta, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 27/12 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1087 (2013.01); H01L 27/1203 (2013.01); H01L 29/0692 (2013.01); H01L 29/7838 (2013.01);
Abstract
Integrated structures include (among other components) a deep well structure having a first impurity, well rows contacting the deep well structure and having a second impurity, a well contact ring enclosing the well rows within an enclosed area, a transistor layer on the well rows, transistors within the transistor layer, and at least one ring-enclosed contact contacting the deep well structure. The ring-enclosed contact is positioned within the enclosed area. Such structures further include a well contact connection contacting the well contact ring and the ring-enclosed contact.