The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 12, 2024

Filed:

Mar. 23, 2022
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Hongyi Mi, Victor, NY (US);

Frederick T. Brady, Webster, NY (US);

Sungin Han, Pittsford, NY (US);

Pooria Mostafalu, Penfield, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 25/60 (2023.01);
U.S. Cl.
CPC ...
H01L 27/14643 (2013.01); H01L 27/14612 (2013.01); H01L 27/14621 (2013.01); H01L 27/14636 (2013.01); H01L 27/14689 (2013.01); H04N 25/60 (2023.01);
Abstract

A pixelated image sensor capable of simultaneously supporting an EVS mode and an image-frame capture mode of operation. An individual pixel of the sensor comprises two distinct sets of subpixels involved in the two modes, respectively, and at least two corresponding, functionally different and independent electrical circuits. The metal interconnect structure of the image-sensor IC is implemented using a wiring topology in which spatial overlap between the wirings of the two electrical circuits is optimized (e.g., minimized) to reduce inter-circuit crosstalk when the two circuits are active at the same time. Such wiring topology may be beneficial, e.g., due to the resulting improvements in the image quality for both operating modes.


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