The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 12, 2024

Filed:

Jun. 22, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sunyoung Noh, Hwaseong-si, KR;

Wandon Kim, Seongnam-si, KR;

Hyunbae Lee, Seoul, KR;

Donggon Yoo, Suwon-si, KR;

Dong-Chan Lim, Hwaseong-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 21/321 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 23/535 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/3212 (2013.01); H01L 21/76802 (2013.01); H01L 21/7684 (2013.01); H01L 21/76843 (2013.01); H01L 21/7685 (2013.01); H01L 21/823475 (2013.01); H01L 23/5283 (2013.01); H01L 23/53238 (2013.01); H01L 23/53252 (2013.01); H01L 23/53266 (2013.01); H01L 23/535 (2013.01); H01L 29/0673 (2013.01);
Abstract

A semiconductor device includes an interlayer dielectric layer on a substrate, a first connection line that fills a first trench of the interlayer dielectric layer, the first trench having a first width, and a second connection line that fills a second trench of the interlayer dielectric layer, the second trench having a second width greater than the first width, and the second connection line including a first metal layer that covers an inner sidewall of the second trench, a barrier layer that covers a bottom surface of the second trench, and a second metal layer on the first metal layer and the barrier layer, the first connection line and the first metal layer include a first metal, and the second metal layer includes a second metal different from the first metal.


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