The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11929286 B1

Date of Patent:

Mar. 12, 2024

Filed:

Jul. 07, 2022

Two dimension material fin sidewall

Applicant:

Tessera Llc, San Jose, CA (US);

Inventors:

Sami Rosenblatt, White Plains, NY (US);

Rasit O. Topaloglu, Poughkeepsie, NY (US);

Assignee:

Tessera LLC, San Jose, CA (US);

Attorney:

HALEY GUILIANO LLP

Primary Examiner:

Cheung Lee

Int. Cl.

CPC ...

H01L 21/8234 (2006.01); H01L 21/02 (2006.01); H01L 21/3105 (2006.01); H01L 21/762 (2006.01); H01L 21/82 (2006.01); H01L 21/8238 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/165 (2006.01); H01L 29/24 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/78 (2006.01);

U.S. Cl.

CPC ...

H01L 21/823431 (2013.01); H01L 21/02378 (2013.01); H01L 21/02527 (2013.01); H01L 21/31055 (2013.01); H01L 21/76224 (2013.01); H01L 21/8213 (2013.01); H01L 21/823412 (2013.01); H01L 21/823871 (2013.01); H01L 27/0886 (2013.01); H01L 29/0649 (2013.01); H01L 29/1606 (2013.01); H01L 29/1608 (2013.01); H01L 29/165 (2013.01); H01L 29/24 (2013.01); H01L 29/517 (2013.01); H01L 29/66045 (2013.01); H01L 29/66795 (2013.01); H01L 29/66969 (2013.01); H01L 29/7781 (2013.01); H01L 29/7851 (2013.01); H01L 29/7853 (2013.01);

Abstract

A semiconductor structure includes fins that have a 2D material, such as Graphene, upon at least the fin sidewalls. The thickness of the 2D material sidewall may be tuned to achieve desired finFET band gap control. Neighboring fins of the semiconductor structure form fin wells. The semiconductor structure may include a fin cap upon each fin and the 2D material is formed upon the sidewalls of the fin and the bottom surface of the fin wells. The semiconductor structure may include a well-plug at the bottom of the fin wells and the 2D material is formed upon the sidewalls and upper surface of the fins. The semiconductor structure may include both fin caps and well-plugs such that the 2D material is formed upon the sidewalls of the fins.

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