The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2024
Filed:
Aug. 05, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Hsiao-Tsung Yen, Hsinchu, TW;
Cheng-Wei Luo, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of making a slow wave inductive structure includes depositing a first dielectric layer over a first substrate. The method further includes forming a first conductive winding in the first dielectric layer. The method further includes bonding a second substrate to the first dielectric layer, wherein the second substrate is physically separated from the first conductive winding, and the second substrate has a thickness ranging from about 50 nanometers (nm) to about 150 nm. The method further includes depositing a second dielectric layer over the second substrate. The method further includes forming a second conductive winding in the second dielectric layer, wherein the second substrate is physically separated from the second conductive winding.