The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 12, 2024

Filed:

Sep. 17, 2021
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Hongxiang Li, Hefei, CN;

Shih-Shin Wang, Hefei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/28 (2006.01); G06F 16/21 (2019.01); G06F 30/36 (2020.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2831 (2013.01); G06F 16/21 (2019.01); G06F 30/36 (2020.01); H01L 22/00 (2013.01);
Abstract

Provided is a method for simulating electricity of a wafer chip. The method includes: a database is constructed, the database including spectroscopic data of a semiconductor structure of the wafer chip obtained from a target key process, actual electrical data of the wafer chip, and a correspondence between the spectroscopic data and the actual electrical data; the target key process is performed on a target wafer chip to obtain the spectroscopic data of the semiconductor structure of the target wafer chip obtained from the target key process, the spectroscopic data being target spectroscopic data; the electrical data of the target wafer chip is simulated based on the obtained target spectroscopic data and the database, the electrical data being target electrical data.


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