The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 12, 2024

Filed:

Sep. 09, 2022
Applicant:

Kokusai Electric Corporation, Tokyo, JP;

Inventors:

Naofumi Ohashi, Toyama, JP;

Tetsuaki Inada, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/40 (2006.01); C23C 16/34 (2006.01); C23C 16/44 (2006.01); C23C 16/458 (2006.01); H01L 21/67 (2006.01); H01L 21/687 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C23C 16/4408 (2013.01); C23C 16/345 (2013.01); C23C 16/4412 (2013.01); C23C 16/4584 (2013.01); H01L 21/67017 (2013.01); H01L 21/68742 (2013.01); H01L 21/68764 (2013.01); H01L 21/68771 (2013.01); H01L 21/0217 (2013.01); H01L 21/02271 (2013.01);
Abstract

Described herein is a technique capable of suppressing generation of particles by removing by-products in a groove of a high aspect ratio. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; and a substrate support provided in the process chamber and including a plurality of supports where the substrate is placed, wherein the process chamber includes a process region where a process gas is supplied to the substrate and a purge region where the process gas above the substrate is purged, and the purge region includes a first pressure purge region to be purged at a first pressure and a second pressure purge region to be purged at a second pressure higher than the first pressure.


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