The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2024
Filed:
Jan. 31, 2022
Applicant:
Cambridge Gan Devices Limited, Cambridgeshire, GB;
Inventors:
Martin Arnold, Cambridge, GB;
Loizos Efthymiou, Cambridge, GB;
Florin Udrea, Cambridge, GB;
John William Findlay, Cambridge, GB;
Giorgia Longobardi, Cambridge, GB;
Assignee:
CAMBRIDGE GAN DEVICES LIMITED, Cambridge, GB;
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/45 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H03F 3/45677 (2013.01); H01L 29/2003 (2013.01); H01L 29/778 (2013.01); H03F 2200/72 (2013.01); H03F 2200/75 (2013.01);
Abstract
An integrated circuit is provided which can sense the drain voltage of an active heterojunction transistor under different conditions and can adjust a driving signal of a gate terminal of the active heterojunction transistor in order to limit conduction losses and/or switching losses.