The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2024
Filed:
May. 09, 2022
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventor:
Chris M. Carlson, Nampa, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/764 (2006.01); H10B 41/27 (2023.01); H10B 41/30 (2023.01); H10B 43/27 (2023.01); H10B 43/30 (2023.01); G11C 16/04 (2006.01); G11C 16/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 21/764 (2013.01); H10B 41/27 (2023.02); H10B 41/30 (2023.02); H10B 43/27 (2023.02); H10B 43/30 (2023.02); G11C 16/0483 (2013.01); G11C 16/06 (2013.01);
Abstract
Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes a channel to conduct current, the channel including a first channel portion and a second channel portion, a first memory cell structure located between a first gate and the first channel portion, a second memory cell structure located between a second gate and the second channel portion, and a void located between the first and second gates and between the first and second memory cell structures.