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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11923289 B1

PDFFull Text
Date of Patent:
Mar. 05, 2024

Filed:

Jun. 10, 2022

Stack of horizontally extending and vertically overlapping features, methods of forming circuitry components, and methods of forming an array of memory cells

Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Sanh D. Tang, Boise, ID (US);

Roger W. Lindsay, Boise, ID (US);

Krishna K. Parat, Palo Alto, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:

Wells St. John P.S.

Primary Examiner:

Shih Tsun A Chou

Int. Cl.
CPC ...
H01L 23/52 (2006.01); G11C 13/00 (2006.01); H01L 23/528 (2006.01); H01L 27/10 (2006.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H01L 23/52 (2013.01); G11C 13/0007 (2013.01); H01L 23/528 (2013.01); H01L 27/10 (2013.01); H01L 27/101 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02); H10B 63/845 (2023.02); H10N 70/8822 (2023.02); H10N 70/8825 (2023.02); H10N 70/8828 (2023.02); H10N 70/8833 (2023.02); H10N 70/8836 (2023.02); G11C 2213/11 (2013.01); G11C 2213/31 (2013.01); G11C 2213/32 (2013.01); G11C 2213/71 (2013.01); G11C 2213/75 (2013.01); H01L 2924/0002 (2013.01); H10B 41/35 (2023.02); H10N 70/882 (2023.02); H10N 70/883 (2023.02);
Abstract

A method of forming circuitry components includes forming a stack of horizontally extending and vertically overlapping features. The features extend horizontally though a primary portion of the stack with at least some of the features extending farther in the horizontal direction in an end portion. Operative structures are formed vertically through the features in the primary portion and dummy structures are formed vertically through the features in the end portion. Openings are formed through the features to form horizontally elongated and vertically overlapping lines from material of the features. The lines individually extend laterally about sides of vertically extending portions of both the operative structures and the dummy structures. Sacrificial material that is elevationally between the lines is at least partially removed in the primary and end portions laterally between the openings. Other aspects and implementations are disclosed.

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