The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2024

Filed:

Sep. 15, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Koichi Motoyama, Clifton Park, NY (US);

Dominik Metzler, Clifton Park, NY (US);

Ekmini Anuja De Silva, Slingerlands, NY (US);

Chanro Park, Clifton Park, NY (US);

Hsueh-Chung Chen, Cohoes, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76897 (2013.01); H01L 21/76816 (2013.01); H01L 21/76885 (2013.01); H01L 23/5226 (2013.01); H01L 23/528 (2013.01);
Abstract

A method of via formation including forming a sacrificial mask over a conductive layer, forming a plurality of pillars in the sacrificial mask and the conductive layer, wherein each pillar of the plurality of pillars includes a sacrificial cap and a first conductive via, depositing a spacer between the plurality of pillars, masking at least one of the sacrificial caps, removing at least one of the sacrificial caps to create openings, forming second conductive vias in the openings, and depositing a dielectric coplanar to a top surface of the second conductive vias.


Find Patent Forward Citations

Loading…