The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2024

Filed:

Apr. 08, 2021
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Tatsuya Yamaguchi, Yamanashi, JP;

Syuji Nozawa, Yamanashi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/764 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7682 (2013.01); H01L 21/764 (2013.01); H01L 21/76859 (2013.01); H01L 21/76864 (2013.01);
Abstract

A method of manufacturing a semiconductor device, includes: stacking a thermally-decomposable organic material on a surface of a substrate in which a recess is formed; implanting ions into a surface of the organic material stacked in the recess so as to modify the surface of the organic material and form a modified layer on the surface of the organic material; and heating the substrate to a first temperature so as to thermally decompose the organic material under the modified layer and to desorb the organic material through the modified layer so that an air gap is formed between the modified layer and the recess.


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