The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2024

Filed:

Feb. 25, 2021
Applicant:

Kokusai Electric Corporation, Tokyo, JP;

Inventors:

Kimihiko Nakatani, Toyama, JP;

Motomu Degai, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02312 (2013.01); H01L 21/02126 (2013.01); H01L 21/02211 (2013.01); H01L 21/30604 (2013.01);
Abstract

There is provided a technique that includes: (a) modifying a surface of a first base exposed on a surface of substrate by supplying modifying gas to the substrate including the first base and a second base exposed on the surface of the substrate; (b) selectively forming a first film on a surface of the second base by supplying first film-forming gas to the substrate after performing (a); (c) etching the first film formed on the surface of the first base to expose the surface of the first base and remodifying the surface of the first base by supplying first fluorine-containing gas to the substrate after the first film is formed on the surface of the first base after performing (b); and (d) selectively forming a second film on the first film formed on the surface of the second base by supplying second film-forming gas to the substrate after performing (c).


Find Patent Forward Citations

Loading…