The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2024

Filed:

Dec. 18, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

Guang Shen, Shanghai, CN;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/00 (2006.01); G06F 3/06 (2006.01); G11C 29/50 (2006.01);
U.S. Cl.
CPC ...
G11C 29/50004 (2013.01); G06F 3/0619 (2013.01); G06F 3/0653 (2013.01); G06F 3/0679 (2013.01);
Abstract

Disclosed is a system that comprises a memory device and a processing device, operatively coupled with the memory device, to perform operations that include, identifying a block family comprising a plurality of blocks of the memory device. The operations performed by the processing device further include associating the block family with a threshold voltage offset. The operations performed by the processing device further include computing an adjustment value of the threshold voltage offset, wherein the adjustment value reflects a time period that has elapsed since a triggering event and a temperature of a memory component carrying one or more blocks of the plurality of blocks.


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Shen, Guang. (2024). Tracking charge loss in memory sub-systems (U.S. Patent No. 11923031). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11923031

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