The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2024
Filed:
Jul. 22, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Sooyong Lee, Yongin-si, KR;
Bong-Soo Kang, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A method of fabricating a semiconductor device includes performing an optical proximity correction (OPC) operation on a design pattern of a layout, and forming a photoresist pattern on a substrate, using a photomask which is manufactured with the layout corrected by the OPC operation. The OPC operation includes generating a target pattern based on the design pattern, performing a first OPC operation, based on the target pattern, to generate a first correction pattern, measuring a target error by comparing a first simulation image of the first correction pattern with the target pattern, generating a retarget pattern from the target pattern, based on the target error, and performing a second OPC operation, based on the retarget pattern, to generate a second correction pattern.