The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2024
Filed:
Jul. 20, 2021
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Durai Vishak Nirmal Ramaswamy, Boise, ID (US);
Marcello Mariani, Milan, IT;
Giorgio Servalli, Fara Gera d'Adda, IT;
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01); H10B 53/50 (2023.01); H10B 53/10 (2023.01); H10B 53/30 (2023.01); H10B 53/40 (2023.01);
U.S. Cl.
CPC ...
H10B 53/50 (2023.02); G11C 11/221 (2013.01); H10B 53/10 (2023.02); H10B 53/30 (2023.02); H10B 53/40 (2023.02);
Abstract
Some embodiments include an integrated assembly having a first bottom electrode adjacent to a second bottom electrode. An intervening region is directly between the first and second bottom electrodes. Capacitor-insulative-material is adjacent to the first and second bottom electrodes. The capacitor-insulative-material is substantially not within the intervening region. Top-electrode-material is adjacent to the capacitor-insulative-material. Some embodiments include methods of forming integrated assemblies.