The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2024
Filed:
Sep. 24, 2021
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventor:
Mitsunari Sukekawa, Higashihiroshima, JP;
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H10B 12/00 (2023.01); G11C 5/10 (2006.01); H01L 29/423 (2006.01); G11C 11/402 (2006.01);
U.S. Cl.
CPC ...
H10B 12/30 (2023.02); G11C 5/10 (2013.01); G11C 11/4023 (2013.01); H01L 29/42372 (2013.01); H10B 12/03 (2023.02);
Abstract
An apparatus includes a semiconductor substrate; an access transistor including channel, source and drain regions arranged in a vertical direction to the semiconductor substrate and a gate-electrode facing to the channel region; a storage capacitor coupled to one of the source and drain regions; a bit-line coupled to the other of the source and drain regions; and a pull-out-electrode connected to the bit-line; wherein surfaces of the source and drain regions and the pull-out-electrode on the bit-line side is arranged at substantially the same height from the upper surface of the semiconductor substrate.