The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2024
Filed:
Jun. 23, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventor:
Te-An Chen, Taichung, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 21/308 (2006.01); H01L 21/762 (2006.01); H01L 21/84 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1211 (2013.01); H01L 21/308 (2013.01); H01L 21/76202 (2013.01); H01L 21/845 (2013.01); H01L 29/785 (2013.01);
Abstract
The present disclosure provides a semiconductor structure. The semiconductor structure includes a semiconductive substrate and an oxidation region formed on the semiconductive substrate. The oxidation region includes a stage with a first width along a horizontal direction. The semiconductor structure further includes a fin formed on a top surface of the stage. A method for forming the semiconductor structure is also provided.