The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2024
Filed:
Dec. 08, 2020
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76834 (2013.01); H01L 21/02164 (2013.01); H01L 21/02282 (2013.01); H01L 21/02301 (2013.01); H01L 21/02318 (2013.01); H01L 21/68764 (2013.01);
Abstract
A substrate processing method includes providing a substrate containing a metal surface and a dielectric material surface, selectively forming a sacrificial capping layer containing a self-assembled monolayer on the metal surface, removing the sacrificial capping layer to restore the metal surface, and processing the restored metal surface and the dielectric material surface. The sacrificial capping layer may be used to prevent metal diffusion into the dielectric material and to prevent oxidation and contamination of the metal surface while waiting for further processing of the substrate.