The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2024
Filed:
May. 04, 2021
Applicant:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Inventor:
Liang Qiao, Wuhan, CN;
Assignee:
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/12 (2006.01); G11C 16/04 (2006.01); G11C 16/24 (2006.01); H03K 19/173 (2006.01);
U.S. Cl.
CPC ...
G11C 7/12 (2013.01); G11C 16/0483 (2013.01); G11C 16/24 (2013.01); H03K 19/1737 (2013.01);
Abstract
A memory device includes an array of memory cells, a plurality of bit lines, a current control circuit, and a discharge enable circuit. The array of memory cells includes a plurality of columns of memory cells. The plurality of bit lines are respectively coupled to the plurality of columns of memory cells. The current control circuit is coupled to the plurality of bit lines to control a discharge current in a discharge operation. The discharge enable circuit is coupled to the current control circuit to enable the discharge operation. The discharge operation discharges a charge on the plurality of bit lines.