The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2024

Filed:

Mar. 22, 2022
Applicant:

Ememory Technology Inc., Hsinchu, TW;

Inventor:

I-Lang Lin, Hsinchu County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0026 (2013.01); G11C 13/0064 (2013.01); G11C 13/0069 (2013.01); G11C 13/003 (2013.01); G11C 13/004 (2013.01); G11C 13/0023 (2013.01); G11C 2013/0083 (2013.01);
Abstract

A resistive memory device includes word lines, first memory cells, second memory cells, bit lines, source lines, and a driver. The driver provides a forming voltage to the first memory cells and the second memory cells through the bit lines and the source lines in a forming process. A first connection length along the bit lines and the source lines between the first memory cells and the driver is longer than a second connection length along the bit lines and the source lines between the second memory cells and the driver. The forming process is performed to the first memory cells before the forming process is performed to the second memory cells. A first value of the forming voltage provided to the first memory cells is less than a second value of the forming voltage provided to the second memory cells.


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