The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2024
Filed:
Jul. 20, 2020
Applicant:
Kla Corporation, Milpitas, CA (US);
Inventor:
Hong Xiao, Pleasanton, CA (US);
Assignee:
KLA CORPORATION, Milpitas, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/86 (2012.01); H01L 21/027 (2006.01); G03F 7/00 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
G03F 1/86 (2013.01); G03F 7/70625 (2013.01); G03F 7/70633 (2013.01); H01L 21/0273 (2013.01); H10B 12/00 (2023.02);
Abstract
A device area includes at least a first layer of photoresist and a second layer of photoresist. First layer metrology targets are positioned at an edge of one of the sides of the first layer of the mat. The first layer metrology targets have a relaxed pitch less than a device pitch. Secondary electron and back-scattered electron images can be simultaneously obtained.
Xiao, Hong. (2024). Overlay measurement targets design (U.S. Patent No. 11914290). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11914290
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile