The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2024
Filed:
May. 16, 2019
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Chieh-Jen Ku, Hillsboro, OR (US);
Bernhard Sell, Portland, OR (US);
Pei-Hua Wang, Beaverton, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/45 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42356 (2013.01); H01L 29/45 (2013.01); H01L 29/66742 (2013.01); H01L 29/786 (2013.01);
Abstract
A device is disclosed. The device includes a source contact in a source contact trench and a drain contact in a drain contact trench, a channel under the source contact and the drain contact, a first spacing layer on a bottom of the source contact trench and a second spacing layer on a bottom of the drain contact trench. The first spacing layer and the second spacing layer are on the surface of the channel. The device also includes a gate electrode below the channel and a dielectric above the gate electrode and underneath the channel.