The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2024
Filed:
Jun. 14, 2021
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Juntao Li, Cohoes, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Chen Zhang, Guilderland, NY (US);
Zhenxing Bi, Dunn Loring, VA (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 27/092 (2006.01); H01L 29/165 (2006.01); H01L 21/3065 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 21/3065 (2013.01); H01L 21/823828 (2013.01); H01L 21/823878 (2013.01); H01L 21/823885 (2013.01); H01L 27/092 (2013.01); H01L 29/165 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01);
Abstract
A method for manufacturing a semiconductor device includes forming a first vertical transistor on a semiconductor substrate, and forming a second vertical transistor stacked on the first vertical transistor. In the method, an isolation layer is formed between the first and second vertical transistors. The isolation layer includes a rare earth oxide.