The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 20, 2024

Filed:

Feb. 16, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Yui Shimizu, San Jose, CA (US);

James E. Davis, Meridian, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/60 (2006.01); H01L 25/065 (2023.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/60 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 2225/06506 (2013.01); H01L 2225/06562 (2013.01);
Abstract

A memory device including a substrate including a substrate contact pad. The memory device includes a first memory die including a first power supply contact pad electrically coupled to the substrate contact pad and a first power supply circuit on the first memory die. The first memory die further includes a first electrostatic discharge (ESD) power clamp contact pad electrically coupled to the substrate contact pad and a first ESD power clamp circuit on the first memory die. The memory device further includes a second memory die including a second power supply contact pad electrically coupled to the substrate contact pad and a second power supply circuit on the second memory die and a second ESD power clamp contact pad electrically coupled to a second ESD power clamp circuit on the second memory die, wherein the second ESD power clamp contact pad is electrically disconnected from the substrate contact.


Find Patent Forward Citations

Loading…