The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 20, 2024

Filed:

Nov. 07, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Michael Sheperek, Longmont, CO (US);

Larry J. Koudele, Erie, CO (US);

Bruce A. Liikanen, Berthoud, CO (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04L 7/00 (2006.01); G11C 29/50 (2006.01); H04L 1/20 (2006.01); G11C 7/10 (2006.01); G11C 16/10 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 29/50004 (2013.01); G11C 7/1051 (2013.01); G11C 16/10 (2013.01); G11C 16/34 (2013.01); H04L 1/203 (2013.01); G11C 2207/2254 (2013.01); G11C 2216/16 (2013.01);
Abstract

Described herein are embodiments related to first-pass continuous read level calibration (cRLC) operations on memory cells of memory systems. A processing device determines that a first programming pass of a programming operation has been performed on a memory cell of a memory component. The processing device then adjusts a read level threshold of the memory cell to be centered between a first programming distribution and a second programming distribution before the second programming pass of the programming operation is performed on the memory cell.


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