The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2024
Filed:
Feb. 21, 2020
Intel Corporation, Santa Clara, CA (US);
John Heck, Berkeley, CA (US);
Lina He, San Jose, CA (US);
Sungbong Park, Sunnyvale, CA (US);
Olufemi Isiade Dosunmu, San Jose, CA (US);
Harel Frish, Albuquerque, NM (US);
Kelly Christopher Magruder, Albuquerque, NM (US);
Seth M. Slavin, Albuquerque, NM (US);
Wei Qian, Walnut, CA (US);
Ansheng Liu, Cupertino, CA (US);
Nutan Gautam, Sunnyvale, CA (US);
Mark Isenberger, Corrales, NM (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Embodiments may relate to a wavelength-division multiplexing (WDM) transceiver that has a silicon waveguide layer coupled with a silicon nitride waveguide layer. In some embodiments, the silicon waveguide layer may include a tapered portion that is coupled with the silicon nitride waveguide layer. In some embodiments, the silicon waveguide layer may be coupled with a first oxide layer with a first z-height, and the silicon nitride waveguide layer may be coupled with a second oxide layer with a second z-height that is greater than the first z-height. Other embodiments may be described or claimed.