The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2024

Filed:

Jul. 21, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Josh Lin, Tainan, TW;

Chia-Ta Hsieh, Tainan, TW;

Chen-Ming Huang, Tainan, TW;

Chi-Wei Ho, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 41/30 (2023.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 21/768 (2006.01); H10B 41/10 (2023.01); H10B 41/40 (2023.01); H10B 41/42 (2023.01); H01L 23/485 (2006.01);
U.S. Cl.
CPC ...
H10B 41/30 (2023.02); H01L 21/76802 (2013.01); H01L 21/76829 (2013.01); H01L 21/76877 (2013.01); H01L 29/42324 (2013.01); H01L 29/6653 (2013.01); H10B 41/10 (2023.02); H10B 41/40 (2023.02); H10B 41/42 (2023.02); H01L 23/485 (2013.01); H01L 29/6656 (2013.01);
Abstract

The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a first gate structure over a substrate and laterally surrounded by a first sidewall spacer. The first gate structure protrudes outward from a top of the first sidewall spacer. A second gate structure is over the substrate and is laterally surrounded by a second sidewall spacer. The first gate structure has a first height that is larger than a second height of the second gate structure. The first sidewall spacer has a first cross-sectional profile that is a different shape and a different size than a second cross-sectional profile of the second sidewall spacer.


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