The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2024

Filed:

Jul. 19, 2021
Applicant:

Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, CN;

Inventors:

Yi-Wang Jhan, Taichung, TW;

Fu-Che Lee, Taichung, TW;

Gang-Yi Lin, Taitung County, TW;

An-Chi Liu, Tainan, TW;

Yifei Yan, Jinjiang, CN;

Yu-Cheng Tung, Kaohsiung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/09 (2023.02); H10B 12/0335 (2023.02); H10B 12/315 (2023.02); H10B 12/34 (2023.02);
Abstract

A semiconductor structure includes a substrate comprising a peripheral region and a memory region defined thereon, a first dielectric layer disposed on the substrate, a second dielectric layer disposed on the first dielectric layer, an opening on the peripheral region of the substrate and having a lower portion through the first dielectric layer and an upper portion through the second dielectric layer, an interconnecting structure disposed on the second dielectric layer and two sides of the opening, a contact structure disposed in the lower portion of the opening, and a spacer covering a top surface of the contact structure, a sidewall of the second dielectric layer, and a sidewall of the interconnecting structure.


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