The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2024
Filed:
Jun. 11, 2021
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Zihao Yang, Cupertino, CA (US);
Mengnan Zou, Santa Clara, CA (US);
Mingwei Zhu, San Jose, CA (US);
David Masayuki Ishikawa, Mountain View, CA (US);
Nag Patibandla, Pleasanton, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/02 (2010.01); H01L 33/06 (2010.01); H01L 33/12 (2010.01); H01L 33/32 (2010.01); H01L 33/14 (2010.01);
U.S. Cl.
CPC ...
H01L 33/12 (2013.01); H01L 33/007 (2013.01); H01L 33/0025 (2013.01); H01L 33/0062 (2013.01); H01L 33/0066 (2013.01); H01L 33/0095 (2013.01); H01L 33/06 (2013.01); H01L 33/145 (2013.01); H01L 33/32 (2013.01);
Abstract
Exemplary processing methods of forming an LED structure may include depositing an aluminum nitride layer on a substrate via a physical vapor deposition process. The methods may include heating the aluminum nitride layer to a temperature greater than or about 1500° C. The methods may include forming an ultraviolet light emitting diode structure overlying the aluminum nitride layer utilizing a metal-organic chemical vapor deposition or molecular beam epitaxy.