The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2024
Filed:
Jul. 19, 2019
Applicant:
Ricoh Company, Ltd., Tokyo, JP;
Inventors:
Naoyuki Ueda, Kanagawa, JP;
Yuki Nakamura, Tokyo, JP;
Yukiko Abe, Kanagawa, JP;
Shinji Matsumoto, Kanagawa, JP;
Yuji Sone, Kanagawa, JP;
Ryoichi Saotome, Kanagawa, JP;
Sadanori Arae, Kanagawa, JP;
Minehide Kusayanagi, Kanagawa, JP;
Assignee:
RICOH COMPANY, LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 27/12 (2006.01); H01L 29/49 (2006.01); H01L 21/445 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); G02F 1/1368 (2006.01); H10K 59/121 (2023.01);
U.S. Cl.
CPC ...
H01L 29/4908 (2013.01); H01L 21/02565 (2013.01); H01L 21/445 (2013.01); H01L 27/1225 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); G02F 1/1368 (2013.01); H10K 59/1213 (2023.02);
Abstract
A field-effect transistor including: a source electrode and a drain electrode; a gate electrode; a semiconductor layer; and a gate insulating layer, wherein the gate insulating layer is an oxide insulator film including A element and B element, the A element being one or more selected from the group consisting of Zr and Hf and the B element being one or more selected from the group consisting of Be and Mg.