The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2024

Filed:

Aug. 31, 2021
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Shyue Seng Tan, Singapore, SG;

Xinshu Cai, Singapore, SG;

Eng Huat Toh, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/788 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42324 (2013.01); H01L 29/40114 (2019.08); H01L 29/66492 (2013.01); H01L 29/66825 (2013.01); H01L 29/7835 (2013.01); H01L 29/7885 (2013.01);
Abstract

A non-volatile memory device is provided. The non-volatile memory device includes a substrate having an active region, a source region, a drain region, and a floating gate. The source region and the drain region may be arranged in the active region, the drain region may be arranged adjacent to the source region. The source region and the drain region may define a channel region therebetween. The floating gate may be arranged over the active region, and may include a first section over the channel region, a plurality of second sections over the drain region, and a connecting section arranged between the first section and the plurality of second sections.


Find Patent Forward Citations

Quick Actions:

Tan, Shyue. (2024). Non-volatile memory devices with asymmetrical floating gates (U.S. Patent No. 11901425). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11901425

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