The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2024

Filed:

Jan. 07, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Scott D. Schellhammer, Meridian, ID (US);

Vladimir Odnoblyudov, Eagle, ID (US);

Jeremy S. Frei, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/075 (2006.01); H01L 33/00 (2010.01); H01L 33/62 (2010.01); H01L 23/00 (2006.01); H01L 21/18 (2006.01); H01L 21/20 (2006.01); H01L 21/447 (2006.01); H01L 23/495 (2006.01); H01L 33/48 (2010.01);
U.S. Cl.
CPC ...
H01L 25/0753 (2013.01); H01L 21/187 (2013.01); H01L 21/2007 (2013.01); H01L 21/447 (2013.01); H01L 23/49513 (2013.01); H01L 24/04 (2013.01); H01L 24/06 (2013.01); H01L 24/83 (2013.01); H01L 24/94 (2013.01); H01L 24/97 (2013.01); H01L 33/0066 (2013.01); H01L 33/0093 (2020.05); H01L 33/0095 (2013.01); H01L 33/486 (2013.01); H01L 33/62 (2013.01); H01L 24/32 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/83001 (2013.01); H01L 2224/83005 (2013.01); H01L 2224/8314 (2013.01); H01L 2224/83121 (2013.01); H01L 2224/83193 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/12042 (2013.01);
Abstract

Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.


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