The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2024
Filed:
Jul. 30, 2021
Macronix International Co., Ltd., Hsinchu, TW;
Chin-Cheng Yang, Kaohsiung, TW;
MACRONIX International Co., Ltd., Hsinchu, TW;
Abstract
A method of fabricating a memory device includes patterning a stacked structure to form a first staircase structure and a second staircase structure; patterning a conductive layer under the stacked structure to form a first slit trench along a first direction; forming a first dielectric layer overlaying the first staircase structure and the second staircase structure and filling into the first slit trench, wherein the first dielectric layer filled in the first slit trench forms a first slit; patterning the first dielectric layer, the stacked structure, and the conductive layer to form multiple second slit trenches, wherein the second slit trenches along a second direction perpendicular to the first direction; performing a replacement process to replace the sacrificial layers with multiple gate conductive layers; and filling a second dielectric layer in the second slit trenches to form multiple second slits.