The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2024

Filed:

Jul. 09, 2020
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Tetsuya Iida, Tokyo, JP;

Yasutaka Nakashiba, Tokyo, JP;

Shinichi Uchida, Tokyo, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/187 (2006.01); H01L 23/522 (2006.01); H01L 49/02 (2006.01); H03M 1/12 (2006.01); H03F 3/04 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5227 (2013.01); H01L 23/5226 (2013.01); H01L 28/10 (2013.01); H03F 3/04 (2013.01); H03M 1/12 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate, a semiconductor element, and a multilayer wiring. The semiconductor element is formed on the semiconductor substrate. The multilayer wiring includes a wiring electrically connected with the semiconductor element, and a first inductor. The multilayer wiring is formed on the semiconductor substrate such that the multilayer wiring covers the semiconductor element. The first inductor is formed such that the first inductor electrically isolated from the wiring and is magnetically connected with the wiring.


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