The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2024
Filed:
Aug. 19, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76814 (2013.01); H01L 21/76224 (2013.01); H01L 21/76877 (2013.01); H01L 21/823431 (2013.01); H01L 21/823475 (2013.01);
Abstract
Methods of forming a semiconductor device structure are described. In some embodiments, the method includes forming an interconnect structure over a substrate. The forming the interconnect structure over the semiconductor device structure includes forming a dielectric layer, then performing an annealing process, then forming one or more openings in the dielectric layer, then performing a first ultraviolet (UV) curing process, and then forming conductive features in the one or more openings.