The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2024

Filed:

Apr. 13, 2022
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Michael J. Seddon, Gilbert, AZ (US);

Francis J. Carney, Phoenix, AZ (US);

Chee Hiong Chew, Seremban, MY;

Soon Wei Wang, Seremban, MY;

Eiji Kurose, Oizumi-machi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B32B 43/00 (2006.01); H01L 21/302 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 21/78 (2006.01); H01L 23/12 (2006.01); H01L 21/784 (2006.01);
U.S. Cl.
CPC ...
H01L 21/302 (2013.01); H01L 21/48 (2013.01); H01L 21/561 (2013.01); H01L 21/565 (2013.01); H01L 21/78 (2013.01); H01L 23/12 (2013.01); H01L 23/3185 (2013.01); H01L 24/04 (2013.01); H01L 24/26 (2013.01); B32B 43/006 (2013.01); H01L 21/784 (2013.01); H01L 2224/94 (2013.01); Y10T 156/1158 (2015.01); Y10T 156/1917 (2015.01);
Abstract

Various implementations of a method of forming a semiconductor package may include forming a plurality of notches into the first side of a semiconductor substrate; forming an organic material over the first side of the semiconductor substrate and the plurality of notches; thinning a second side of the semiconductor substrate opposite the first side one of to or into the plurality of notches; stress relief etching the second side of the semiconductor substrate; applying a backmetal over the second side of the semiconductor substrate; removing one or more portions of the backmetal through jet ablating the second side of the semiconductor substrate; and singulating the semiconductor substrate through the permanent coating material into a plurality of semiconductor packages.


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