The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2024

Filed:

Feb. 03, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Tao Jiang, Shanghai, CN;

Bo Zhou, Shanghai, CN;

Guang Hu, Mountain View, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 11/4099 (2006.01); G11C 11/4074 (2006.01); G11C 11/4096 (2006.01); G11C 11/4076 (2006.01); G11C 11/408 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4099 (2013.01); G11C 11/4074 (2013.01); G11C 11/4076 (2013.01); G11C 11/4085 (2013.01); G11C 11/4096 (2013.01);
Abstract

Methods, systems, and devices for reference voltage adjustment for word line groups are described. In some examples, one or more components of a memory system may determine a duration that data has been stored to one or more memory cells. Based on the duration, a voltage value of one or more reference voltages may be adjusted accordingly. For example, a voltage value of one or more reference voltages may be adjusted based on the duration. Moreover, the reference voltage values may be adjusted differently in response to the memory cells having stored data for a relatively longer duration, as opposed to memory cells that have stored data for a relatively shorter duration. The adjusted reference voltages may be used during a subsequent read operation. The voltage value of the one or more reference voltages may be adjusted on a word-line group by word-line group basis.


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