The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2024

Filed:

Jan. 19, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Saira Samar Malik, Lafayette, IN (US);

Chinnakrishnan Ballapuram, San Jose, CA (US);

Taeksang Song, San Jose, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0625 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01);
Abstract

Methods, systems, and devices for strategic power mode transition in a multi-memory device are described. A controller may receive, from a host device, a command indicating that the controller is to transition a volatile memory and a non-volatile memory from respective deep sleep modes. In a first example, the controller may respond to the command by transitioning the volatile memory to a standby power mode for the volatile memory and transitioning the non-volatile memory to an intermediate power mode for the non-volatile memory that consumes less power than a standby mode for the non-volatile memory. In a second example, the controller may respond to the command by transitioning the volatile memory to the standby power mode for the volatile memory and maintain the non-volatile memory in the deep sleep mode until a condition, such as a miss, occurs.


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