The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2024

Filed:

Dec. 07, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

Yanhua Bi, Shanghai, CN;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0611 (2013.01); G06F 3/0629 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01); G06F 2212/7204 (2013.01);
Abstract

Methods, systems, and devices for techniques to reduce write amplification are described. A memory device may receive a write command from a host device and may determine that a quantity of commands stored in a buffer for execution by a memory array satisfies a first threshold. In some examples, the memory device may identify whether a write amplification parameter associated with the memory array satisfies a second threshold. The memory device may write data associated with the write command to the memory array using a first mode to write the data or a second mode to write the data based on determining that the quantity of commands satisfies the first threshold and/or identifying whether the write amplification parameter satisfies the second threshold. In some examples, the memory device may adjust a value of the first threshold or the second threshold or both based on the write amplification parameter.


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