The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2024
Filed:
Dec. 07, 2020
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Pia Homm Jara, Leuven, BE;
Werner Knaepen, Leuven, BE;
Dieter Pierreux, Dilbeek, BE;
Bert Jongbloed, Oud-Heverlee, BE;
Panagiota Arnou, Leuven, BE;
Ren-Jie Chang, Leuven, BE;
Qi Xie, Wilsele, BE;
Giuseppe Alessio Verni, Ottignies, BE;
Gido van der Star, Leuven, BE;
Assignee:
ASM IP Holding B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/34 (2006.01); H01L 21/285 (2006.01); C23C 16/44 (2006.01); C23C 16/56 (2006.01); C23C 16/455 (2006.01); C23C 16/04 (2006.01);
U.S. Cl.
CPC ...
C23C 16/34 (2013.01); C23C 16/04 (2013.01); C23C 16/4408 (2013.01); C23C 16/45527 (2013.01); C23C 16/45544 (2013.01); C23C 16/56 (2013.01); H01L 21/28568 (2013.01);
Abstract
Methods of forming a vanadium nitride-containing layer comprise providing a substrate within a reaction chamber of a reactor and depositing a vanadium nitride-containing layer onto a surface of the substrate, wherein the deposition process comprises providing a vanadium precursor to the reaction chamber and providing a nitrogen precursor to the reaction chamber.