The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2024
Filed:
Oct. 11, 2018
Applicant:
Shin-etsu Handotai Co., Ltd., Tokyo, JP;
Inventors:
Susumu Higuchi, Annaka, JP;
Kenji Sakai, Annaka, JP;
Masato Yamada, Chiyoda-ku, JP;
Masanobu Takahashi, Annaka, JP;
Junya Ishizaki, Takasaki, JP;
Assignee:
SHIN-ETSU HANDOTAI CO., LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09K 11/70 (2006.01); C09K 11/08 (2006.01); H01L 33/00 (2010.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01);
U.S. Cl.
CPC ...
C09K 11/706 (2013.01); C09K 11/0883 (2013.01); H01L 33/00 (2013.01); C30B 25/183 (2013.01); C30B 29/40 (2013.01);
Abstract
A semiconductor phosphor configured to exhibit photoluminescence upon irradiation with excitation light, including: at least one active layer made of a compound semiconductor and containing an n-type or p-type dopant; and at least two barrier layers made of a compound semiconductor and having a larger band gap than the active layer. The active layer and the barrier layers are alternately stacked. This provides a semiconductor phosphor which allows easy wavelength adjustment, high efficiency and stability.