The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2024

Filed:

Feb. 13, 2017
Applicant:

Fujimi Incorporated, Kiyosu, JP;

Inventors:

Shinichiro Takami, Kiyosu, JP;

Yusuke Kawasaki, Kiyosu, JP;

Assignee:

FUJIMI INCORPORATED, Kiyosu, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B24B 37/04 (2012.01); C09G 1/02 (2006.01); C09K 3/14 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); B24B 37/00 (2012.01);
U.S. Cl.
CPC ...
B24B 37/044 (2013.01); B24B 37/00 (2013.01); C09G 1/02 (2013.01); C09K 3/1409 (2013.01); H01L 21/02013 (2013.01); H01L 21/02024 (2013.01); H01L 21/30625 (2013.01);
Abstract

Provided are a polishing method that can be commonly applied to different types of silicon substrates varying in resistivity as well as a polishing composition set used in the polishing method. The silicon substrate polishing method provided by this invention comprises supplying a first polishing slurry Sand a second polishing slurry Sto a silicon substrate to be polished, switching them in this order midway through polishing the silicon substrate. The first polishing slurry Scomprises an abrasive Aand a water-soluble polymer P. The polishing removal rate of the first polishing slurry Sis higher than that of the second polishing slurry S.


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