The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2024
Filed:
Jun. 16, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Ming Zhu, Hsinchu, TW;
Hui-Wen Lin, Hsinchu, TW;
Harry Hak-Lay Chuang, Hsinchu, TW;
Bao-Ru Young, Hsinchu, TW;
Yuan-Sheng Huang, Hsinchu, TW;
Ryan Chia-Jen Chen, Hsinchu, TW;
Chao-Cheng Chen, Hsinchu, TW;
Kuo-Cheng Ching, Hsinchu, TW;
Ting-Hua Hsieh, Hsinchu, TW;
Carlos H. Diaz, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of making a semiconductor device includes depositing a TiN layer over a substrate. The method further includes doping a first portion of the TiN layer using an oxygen-containing plasma treatment. The method further includes doping a second portion of the TiN layer using a nitrogen-containing plasma treatment, wherein the second portion of the TiN layer directly contacts the first portion of the TiN layer. The method further includes forming a first metal gate electrode over the first portion of the TiN layer. The method further includes forming a second metal gate electrode over the second portion of the TiN layer, wherein the first metal gate electrode has a different work function from the second metal gate electrode, and the second metal gate electrode directly contacts the first metal gate electrode.