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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11894429 B1

PDFFull Text
Date of Patent:
Feb. 06, 2024

Filed:

Jun. 28, 2022

Amorphous metal oxide semiconductor layer and semiconductor device

Applicant:

Nissan Chemical Industries, Ltd., Tokyo, JP;

Inventors:

Yoshiomi Hiroi, Funabashi, JP;

Shinichi Maeda, Funabashi, JP;

Assignee:

NISSAN CHEMICAL INDUSTRIES, LTD., Tokyo, JP;

Attorney:

Oliff PLC

Primary Examiner:

William D Young

Int. Cl.
CPC ...
H01L 29/24 (2006.01); H01L 21/02 (2006.01); H01L 29/786 (2006.01); C04B 35/626 (2006.01); C04B 35/01 (2006.01); C04B 35/453 (2006.01);
U.S. Cl.
CPC ...
H01L 29/247 (2013.01); C04B 35/01 (2013.01); C04B 35/453 (2013.01); C04B 35/62625 (2013.01); C04B 35/62675 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02592 (2013.01); H01L 21/02628 (2013.01); H01L 29/78693 (2013.01); C04B 2235/3284 (2013.01); C04B 2235/3286 (2013.01); C04B 2235/3293 (2013.01);
Abstract

Methods for producing the amorphous metal oxide semiconductor layer where amorphous metal oxide semiconductor layer is formed by use of a precursor composition containing a metal salt, a primary amide, and a water-based solution. The methodology for producing the amorphous metal oxide semiconductor layer includes applying the precursor composition onto a substrate to form a precursor film, and firing the film at a temperature of 150° C. or higher and lower than 300° C.

Find Patent Forward Citations

Hiroi, Yoshiomi. (2024). Amorphous metal oxide semiconductor layer and semiconductor device (U.S. Patent No. 11894429). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11894429

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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