The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 06, 2024

Filed:

Jul. 27, 2021
Applicant:

Changxin Memory Technologies, Inc.;

Inventors:

Qiang Zhang, Hefei, CN;

Zhan Ying, Hefei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/762 (2006.01); H01L 27/105 (2023.01); H10B 99/00 (2023.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 21/76224 (2013.01); H01L 27/105 (2013.01); H10B 99/00 (2023.02);
Abstract

A memory formation method includes: providing a substrate; forming a first mask layer on the substrate, in the first mask layer there being formed a plurality of parallel-arranged strip-shaped patterns positioned above the array area, and an end of each of the strip-shaped patterns being connected to the first mask layer on the peripheral area of the substrate; forming a second mask layer on the first mask layer, in the second mask layer there being formed a plurality of first patterns; and etching layer by layer by using the second mask layer and the first mask layer as masks to transfer the strip-shaped patterns and the first patterns into the substrate to form the discrete active areas arranged in an array.


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