The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2024
Filed:
Aug. 30, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Chih-Wei Lee, New Taipei, TW;
Wen-Hung Huang, Hsinchu, TW;
Kuo-Feng Yu, Hsinchu County, TW;
Jian-Hao Chen, Hsinchu, TW;
Hsueh-Ju Chen, Taipei, TW;
Zoe Chen, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method includes providing a structure having a first channel member and a second channel member over a substrate. The first channel member is located in a first region of the structure and the second channel member is located in a second region of the structure. The method also includes forming a first oxide layer over the first channel member and a second oxide layer over the second channel member, forming a first dielectric layer over the first oxide layer and a second dielectric layer over the second oxide layer, and forming a capping layer over the second dielectric layer but not over the first dielectric layer. The method further includes performing an annealing process to increase a thickness of the second oxide layer under the capping layer.