The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 06, 2024

Filed:

Jun. 20, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Meng-Han Lin, Hsinchu, TW;

Te-An Chen, Taichung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/82 (2006.01); H01L 21/8234 (2006.01); H01L 27/06 (2006.01); H01L 29/417 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823418 (2013.01); H01L 21/823462 (2013.01); H01L 21/823475 (2013.01); H01L 27/0617 (2013.01); H01L 29/0653 (2013.01); H01L 29/41725 (2013.01);
Abstract

A semiconductor device includes a substrate having a first region and a second region, a first gate structure disposed on the substrate within the first region, a first S/D region, a first S/D contact, a second gate structure on the substrate within the second region, a second S/D region and a second S/D contact. The first S/D region is disposed in the substrate within the first region and beside the first gate structure. The first S/D contact is connected to the first S/D region. The second S/D region is disposed in the substrate within the second region and beside the second gate structure. The second S/D contact is connected to the second S/D region. The contact area between the second S/D region and the second S/D contact is larger than a contact area between the first S/D region and the first S/D contact.


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