The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2024
Filed:
May. 25, 2021
Applicant:
Filnex Inc., Tokyo, JP;
Inventor:
Mitsuhiko Ogihara, Tokyo, JP;
Assignee:
FILNEX INC., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 21/306 (2006.01); H01L 21/683 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7806 (2013.01); H01L 21/30621 (2013.01); H01L 21/6835 (2013.01); H01L 21/02392 (2013.01); H01L 21/02395 (2013.01); H01L 21/02463 (2013.01); H01L 21/02502 (2013.01); H01L 21/02543 (2013.01); H01L 21/02546 (2013.01); H01L 2221/68363 (2013.01);
Abstract
To prevent the surface of a base substrate and the bottom surface of a separated semiconductor epitaxial layer from being bonded to each other even after a removal layer is removed, the semiconductor substrate includes a base substrate, a first removal layer provided on the base substrate, a second removal layer provided above the first removal layer, and a semiconductor epitaxial layer provided above the second removal layer, and an etching rate of the second removal layer for a predetermined etching material is larger than the etching rate of the first removal layer for the predetermined etching material.