The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2024
Filed:
Jan. 12, 2022
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventor:
Ping Hsu, New Taipei, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/535 (2006.01); H01L 23/532 (2006.01); H01L 21/3213 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76889 (2013.01); H01L 21/32133 (2013.01); H01L 21/76895 (2013.01); H01L 23/5283 (2013.01); H01L 23/535 (2013.01); H01L 23/53209 (2013.01);
Abstract
A method for fabricating the semiconductor device includes providing a substrate, forming a bottom conductive plug on the substrate, forming a semiconductor layer on the bottom conductive plug, rounding a top surface of the semiconductor layer, turning the semiconductor layer into an intervening conductive layer, and forming a top conductive plug on the intervening conductive layer